Topic: Infineon Rolls Out Enhanced 1,200-V SiC MOSFETs
Infineon Rolls Out Enhanced 1,200-V SiC MOSFETs
Infineon has expanded its CoolSiC portfolio with 1200V M1H SiC MOSFETs, offering performance enhancements and new package features.
Infineon Technologies AG has expanded its CoolSiC portfolio with the introduction of 1200V SiC MOSFETs with M1H technology with enhanced features. These devices will be available in Easy modules and discrete packages using .XT interconnect technology. Applications include solar power systems, electric vehicle fast charging, energy storage systems, and other industrial applications.
Infineon introduces new package features for discrete modules and components with improved thermal performance, and the new derivative of M1H technology also offers an extended operating window for gate operation, said Peter Friedrichs, vice president of SiC at Infineon, during a presentation. Of video.
Friedrichs emphasizes that the new M1H variant is an update of the previous M1 technology with the same basic device concept, so there are no changes to the cell design or cell dimensions. He also noted that the number of products will increase significantly for both discrete devices and modules. Reference boards will also be added to the portfolio.
One of the most important advances of the CoolSiC base technology is its significantly larger gate operation that improves on-resistance for a given die size, Friedrichs said. With M1H technology, Infineon can offer the full window of gate voltages down to -10 V at the highest switching frequencies, he said.
The gate’s wider operating voltage range also helps with design- and driver-related voltage spikes in the gate, Infineon said.
Also, the datasheet now provides more details on the gate-source voltage, including the maximum transient voltage from -10 V to 23 V and the maximum static voltage from -7 V to 20 V, as well as the gate voltages. recommended. As in the past, the recommended gate voltage is what we think is the best performance you can achieve with respect to total losses and reliability, said Friedrichs.
Another feature of the M1H technology is the improvement in RDS(on) [on-resistance] given the size of the die, Friedrichs said. Approximately 12% less RDS(on) is now possible with this new technology derivative compared to the previous generation [M1] at operating temperature.
The M1H technology will be integrated into Infineon’s Easy module family to enhance the Easy 1B and 2B modules. In addition, Infineon is implementing the new Easy 3B module with the 1200V CoolSiC MOSFET, which offers a maximum temporary junction temperature of 175˚C for higher overload capacity. This allows for higher power density and fault event coverage.
The Easy 3B doubles the size of the Easy 2B and can double the power handling capacity, Friedrichs said.
We’ve now launched new array sizes, giving us much more flexibility in designing particular products and particular topologies over a wide range of power ratings: we start from 13mΩ on the largest array and go up to 55mΩ, he said. Another new feature added for the power modules is a short-term overload capability where we can operate the devices up to a junction temperature of 175˚C. This is of course very important to manage certain overloads or stress loads.
Compared to its predecessor M1, Infineon has also made a change to the internal gate resistance (RG) of the M1H modules, increasing it from 4 Ω to 8 Ω, allowing the switching behavior to be optimized. Friedrichs said this allows for faster and easier design for customers while maintaining the same basic power-up and power-down behavior for both variants.
Infineon plans to introduce a large portfolio of Easy module configurations with a variety of topologies. These include half-bridge, full-bridge, SixPACK, booster, and three-tier modules.
Low-Ohmic Discrete Packages
In addition to updates to the Easy module family, Infineon has added low-ohm discrete SiC MOSFETs in TO packages using the companies. XT technology was previously introduced in the D2PAK-7L package. The CoolSiC MOSFET 1200-V M1H portfolio includes new ultra-low 7mΩ, 14mΩ, and 20mΩ turn-on resistors in TO247-3 and TO247-4 discrete packages.
The new SiC MOSFETs are easy to design, especially because of the gate voltage overshoots and undershoots with the new peak gate-source voltage down to -10 V, Friedrichs said. In addition, they come with avalanche and short circuit capacity specifications.
The new types include a device with a 7 mΩ on-resistance, which offers the lowest on-resistance in a single-product configuration in the TO package at 1200 V, Friedrichs said. Rated power can go up to 30 kW for 7 mΩ devices and 15 kW to 22 kW for 14 mΩ and 20 mΩ devices.
One of the biggest gains of the low-ohm part is that the user doesn’t need to connect in parallel to achieve certain power ratings in a single package, so more power and less weight can be achieved, Friedrichs said.
In addition, the .XT interconnect technology improves thermal dissipation capacity by up to 30% compared to a standard interconnect, Friedrichs said. This provides users with various optimizations, such as increasing the output current, increasing the switching frequency, or lowering the junction temperature to improve life expectancy, he added.
This translates into a 15% improvement in thermal conductivity or a reduction in the number of passive components due to the increased switching frequency. In addition, without changing the operating conditions of the system, the .XT technology will lower the SiC MOSFET junction temperature, significantly increasing system life and power cycle capabilities, Infineon said.
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Benefits include >25% reduction in shell junction thermal resistance (Rthjc), >45% reduction in shell junction thermal impedance (Zthjc), and lower thermomechanical stress, which it also increases power cycle capabilities, Friedrichs said.
Module and discrete variants are now available. These include the new Easy 3B module using the 1200V CoolSiC MOSFET and low resistance TO247 discrete devices with the .XT interconnect.